A new nuclear event detector (NED, pictured) from Micross Components is being offered as a replacement to the current 40-year old legacy NED products, which up until now were the only hi-performance NEDs available. These sensitive, high speed parts can be used to detect the initial rise of the gamma radiation pulse from a nuclear event and quickly shut down electronic systems for a brief interval in order to survive the blast and then resume normal operation.

Applications include missiles, satellites, ground vehicles, or any system which needs to potentially survive a nuclear event. This new Nuclear Event Detector IC is manufactured on US soil in the Jazz Semiconductor Trusted Foundry, a wholly owned subsidiary of Tower Semiconductor NPB.

The Micross MYXRHNEDHCJ series Nuclear Event Detectors are available screened to Class H Military flow or Class K Space flow, and feature integrated differential drivers – providing improved overall noise immunity, 300% greater radiation dose sensitivity, and 25% faster response times in comparison with legacy devices. Legacy NED devices require external differential drivers, which typically increase weight due to additional radiation shielding requirements, and further increase response times by up to 100%.
Customized NEDs can be optimized for the fastest response time, highest sensitivity, broadest dynamic range, reduced size and weight, or the most optimal combination of these features to address your specific requirements. A Micross applications engineering team is available to assist in this process.

The new Micross radiation-hardened NED offers improvements in multiple areas, including: reductions in size, weight and power (SWaP) due to the elimination of any shielding requirements on the peripheral circuitry, and lower power consumption; 4X lower minimum dose rate threshold coupled with reduced dose rate threshold variation over temperature; increased noise immunity and sensitivity to nuclear events along with reduced delay time, resulting in 25% faster event detection; a wide variety of packaging options; and, improvements in obsolescence mitigation and reliability, via a vertically integrated in-house sourced PIN diode and ASIC.
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